| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7b72691b61448140b9a080282c2ccf0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D57-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01D57-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D57-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-58 |
| filingDate |
2020-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a92ae92574a6146ed5745eb71dc53a9e |
| publicationDate |
2021-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210112614-A |
| titleOfInvention |
Transition metal chalcogenide thin film and its manufacturing method |
| abstract |
By injecting a transition metal precursor and a chalcogen element precursor in the presence of an alkali metal salt, forming a transition metal chalcogen compound thin film on the substrate; And applying a voltage in the thickness direction to the transition metal chalcogen compound thin film; a method for producing a transition metal chalcogen compound thin film comprising a is disclosed. The method for preparing a transition metal chalcogen compound thin film provided in one aspect of the present invention effectively removes the alkali metal between the substrate and the transition metal chalcogen compound thin film acting as an impurity, and at the same time, using this, the transition metal chalcogen compound thin film It has the effect of healing defects. Accordingly, the crystallinity of the transition metal chalcogen compound thin film is improved, and the transition metal chalcogen compound may have the same properties as an intrinsic semiconductor. In addition, there is also a process advantage in that there is no need to transfer the thin film to another substrate. |
| priorityDate |
2020-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |