| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2021-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78aa83dfb9454443017f3ff090b2314b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86278739d78f82e4e8019458d88aea98 |
| publicationDate |
2021-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210090601-A |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
The present invention reduces oxygen vacancies in and in the vicinity of the oxide semiconductor film and improves the electrical characteristics of a transistor using the oxide semiconductor film. It is a semiconductor device using a gate electrode in which the Gibbs free energy in the oxidation reaction is higher than that of the gate insulating film. Oxygen moves from the gate electrode to the gate insulating film due to the fact that the gate electrode has a higher Gibbs free energy in the oxidation reaction than the gate insulating film in the region where the gate electrode and the gate insulating film are in contact, and the oxygen passes through the gate insulating film to form a gate insulating film and a gate insulating film. By supplying to the oxide semiconductor film formed in contact with each other, oxygen vacancies in the oxide semiconductor film and in the vicinity of the oxide semiconductor film can be reduced. |
| priorityDate |
2011-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |