Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
filingDate |
2021-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56595c6d8e4a6f1c29b6b0c66281b648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e5271c99c4095bc398bd88b63953101 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_239bf01a515ffdcd7d7ebcfef183bfa8 |
publicationDate |
2021-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20210090112-A |
titleOfInvention |
Method of manufacturing semiconductor device, substrate processing apparatus, and program |
abstract |
The film quality of the oxide film formed on the substrate is improved. A plurality of cycles of (a) forming a nitride film by supplying a film forming gas to the substrate and (b) oxidizing the nitride film to a first oxide film by supplying an oxidizing gas to the substrate are performed non-simultaneously a plurality of times By carrying out the process, the maximum distance from the interface between the nitride film formed in (a) and the underlying layer of the nitride film to the surface of the nitride film is 2 nm or more and 4 nm or less, including a step of forming an oxide film of a predetermined thickness on the surface of the substrate. do. |
priorityDate |
2020-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |