| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cd75bebe3b375c0b208631e4bb176ed0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2020-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ab0c5ccba559840e03b80596de655ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_902352a934244ce77f2d4411606f9109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87f2972720af3fa14bfdc306a71b2849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8874f944b75f010d156ec88f87977621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aec147d57aa33671150c92278a9983c |
| publicationDate |
2021-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210086435-A |
| titleOfInvention |
Transistor, ternary inverter device including the same, method of fabricating transistor |
| abstract |
The transistor includes a constant current forming layer, a channel layer provided on the constant current forming layer, a pair of source/drain regions spaced apart from each other on the constant current forming layer with a channel layer therebetween, a gate electrode provided on the channel layer, and a gate electrode and a channel layer. and a gate ferroelectric film provided therebetween. |
| priorityDate |
2019-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |