| abstract |
The etching composition is an etching composition for etching a silicon film, and includes nitric acid, hydrofluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water, wherein the nitrogen compound is a fluorine atom (F), a phosphorus atom (P), and At least one element selected from carbon atoms (C) is included. In order to manufacture an integrated circuit device, a structure in which a silicon film doped with a first doping concentration and an epitaxial film doped with a second doping concentration different from the first doping concentration are stacked is prepared. The silicon layer among the silicon layer and the epitaxial layer is selectively etched using the etching composition. |