abstract |
To provide a novel etching gas composition capable of selectively etching SiO 2 with respect to low-k materials (Low-k materials (SiON, SiCN, SiOCN, SiOC)) comprising sulfur-containing compounds. General formula (1): CxFySz (wherein x, y and z are 2 ≤ x ≤ 5, y ≤ 2x, 1 ≤ z ≤ 2), including saturated and cyclic sulfur-containing fluorocarbon compounds A dry etching gas composition. |