| abstract |
A semiconductor structure is provided. The semiconductor structure includes a first gate all around FET over a substrate, wherein the first gate all around FET includes first nanostructures and a first gate stack surrounding the first nanostructures. The semiconductor structure also includes a first FinFET adjacent the first gate all around FET, the first FinFET including the first fin structure and a second gate stack over the first fin structure. The semiconductor structure also includes a gate-cut feature interposed between the first gate stack of the first gate all around FET and the second gate stack of the first FinFET. |