http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210072970-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-033 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-033 |
| filingDate | 2019-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d0b7c9db8db4ac0f016c2eaee593779 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6785bb7eb75779b6f7c34c68e58f961a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40d9861fde467d306bc1b5daefbb1148 |
| publicationDate | 2021-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20210072970-A |
| titleOfInvention | Method of forming photoresist pattern |
| abstract | The present invention comprises the steps of: (i) forming a photoresist film on a support by using a photoresist composition; (ii) exposing the photoresist film; and (iii) developing the photoresist film after the exposure to form a photoresist pattern, The photoresist composition comprises a resin (A) whose solubility in a developer changes due to the action of an acid, an acid generator (B) that generates an acid upon exposure, a photodegradable base (D1), a solvent (S) and containing the compound (X) represented by the following formula (x-1), (x-1) [Wherein, R 1 to R 4 are each independently a hydroxyl group or an alkyl group having 1 to 5 carbon atoms, and R 5 and R 6 are each independently hydrogen, an alkyl group having 1 to 5 carbon atoms, or a hydroxy group having 1 to carbon atoms substituted with a hydroxy group. 10 is an alkyl group, a, b, c and d are each independently an integer of 0 to 3, and e and f are each independently an integer of 1 to 2.] It relates to a photoresist pattern forming method, characterized in that the amount of the solvent remaining in the photoresist film formed in the step (i) is 910 ppm or more. |
| priorityDate | 2019-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 213.