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filingDate 2020-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ad4c1672dbe45ea3efa592517048e6b
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publicationDate 2021-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20210070176-A
titleOfInvention Selective recess of interconnects for probing hybrid bond devices
abstract An integrated circuit (IC) device includes a first component, the first component including a first dielectric, and a plurality of adjacent first interconnect structures in the first dielectric. The IC device includes a second component, the second component including a second dielectric, and a plurality of adjacent second interconnect structures in the second dielectric. A second one of the second interconnect structures is in direct contact with a first one of the first interconnect structures at a bonding interface between the first component and the second component. A second first of the first interconnect structures is spaced apart from the plane of the bonding interface.
priorityDate 2019-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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