abstract |
In the present invention, in the CIS-based thin film, the doping concentration of sulfur inside the CIS-based thin film is 0.1 to 4 at%, so that the microstructure, crystallinity, and band gap change do not occur, and defect chemical selenium vacancies caused by sulfur addition It is possible to provide a high-quality CIS-based thin film capable of defect passivation. It is possible to provide a CIS-based solar cell with improved photoelectric performance by improving photovoltage and filling rate by utilizing the above thin film. |