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publicationDate 2021-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20210066450-A
titleOfInvention Cis based thin film, solar cell comprising the thin film and fabrication method thereof
abstract In the present invention, in the CIS-based thin film, the doping concentration of sulfur inside the CIS-based thin film is 0.1 to 4 at%, so that the microstructure, crystallinity, and band gap change do not occur, and defect chemical selenium vacancies caused by sulfur addition It is possible to provide a high-quality CIS-based thin film capable of defect passivation. It is possible to provide a CIS-based solar cell with improved photoelectric performance by improving photovoltage and filling rate by utilizing the above thin film.
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