| abstract |
The method comprises forming a dummy gate stack over a semiconductor region of a wafer; and depositing a gate spacer layer on sidewalls of the dummy gate stack using atomic layer deposition (ALD). Depositing the gate spacer layer includes performing an ALD cycle to form the dielectric atomic layer. The ALD cycle comprises the steps of introducing sylated methyl to the wafer, purging the sylated methyl; introducing ammonia to the wafer, and purging the ammonia. |