| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c28d4ea320b90ed19f8de42eb1428cc8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2019-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e92bcb0ad6080946d2026585730ab14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c4279b7d8f80b9fdb2d1dead98b529d |
| publicationDate |
2021-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210061368-A |
| titleOfInvention |
Etching composition |
| abstract |
The present disclosure relates to an etching composition useful for selectively removing tungsten (W) and/or titanium nitride (TiN) from a semiconductor substrate, for example as an intermediate step in a multi-step semiconductor manufacturing process. |
| priorityDate |
2018-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |