http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210056846-A

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filingDate 2019-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20210056846-A
titleOfInvention Method of depositing niobium nitride thin films
abstract According to an embodiment of the present invention, a method of forming a niobium nitride thin film comprises: an adsorption step of selectively adsorbing a niobium halogen ion compound to a substrate and selectively adsorbing it to a surface of the substrate; And a nitriding step of supplying a nitrogen source to the substrate to react with the niobium halogen ion compound to form niobium nitride.
priorityDate 2019-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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