| abstract |
A semiconductor device and method are provided that utilize a process of treating a bottom antireflection layer. The treatment process may be a physical treatment process in which a material is added to fill the openings and voids in the material of the lower antireflection layer, or the treatment process may be a chemical treatment process in which a chemical reaction is used to form the protective layer. By treating the bottom anti-reflective layer, the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects arising from such diffusion. |