| abstract |
In the method of manufacturing a semiconductor device including a FinFET, a fin structure having an upper fin structure made of SiGe and a lower fin structure made of a material different from the upper fin structure is formed, and a cover layer is formed on the fin structure. A thermal operation is performed on the fin structure formed and covered with the cover layer, and a source/drain epitaxial layer is formed in the source/drain regions of the upper fin structure. The thermal operation changes the germanium distribution in the upper fin structure. |