| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-32 |
| filingDate |
2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce856c092edf1f2e3d8b1cdf2a542b42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c756b43432ead7fc33ddeff8cf691787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e87721523c556887832f27e0b26d382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72bd79c87e6e2bf40a4568d86e0d1a58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b13620294fc8b8c9d730e58ba2acb30a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f621ea689ae39c1bfe5bcb9aa2337bb2 |
| publicationDate |
2021-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210043758-A |
| titleOfInvention |
Thin film formation method |
| abstract |
In the method of the present invention, the temperature of the object on which the film is formed is raised to at least 200° C., and the film is deposited on the object so that the film-forming material and the carrier gas are deposited on the object on which the film is formed. A first step of changing from a first state supplied to the object to be formed to a second state in which the supply of the film-forming material is omitted from the first state; And the hydrogen from a third state supplied to the object on which the film is formed so that the temperature of the object on which the film is formed is raised to at least 200°C, and hydrogen gas and a carrier gas reduce the film-forming material. And a second step for changing the supply of gas to a fourth state in which the supply of gas is removed from the third state. The film-forming material is any one material selected from the group consisting of Al(C x H 2x+1 ) 3 , Al(C x H 2x+1 ) 2 H and Al(C x H 2x+1 ) 2 Cl to be. An aluminum carbide film having an aluminum atomic content of at least 20 atomic% is formed on the surface of the object on which the film is formed by alternately repeating the first step and the second step. |
| priorityDate |
2017-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |