| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2012-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bca60e11ea5cabf6bf9d4c65da0e3a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402 |
| publicationDate |
2021-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210034703-A |
| titleOfInvention |
Method for manufacturing semiconductor device and semiconductor device |
| abstract |
An object of the present invention is to provide a semiconductor device in which defects are reduced and miniaturization is realized while maintaining good characteristics. A semiconductor layer is formed, a first conductive layer is formed on the semiconductor layer, the first conductive layer is etched using a first resist mask to form a second conductive layer having a concave portion, and the first resist mask is reduced to form a second conductive layer. 2 A resist mask is formed, and the second conductive layer is etched using the second resist mask to form a source electrode and a drain electrode each having a tapered protrusion at the periphery. A gate insulating layer in contact is formed, and a gate electrode is formed on the gate insulating layer in a portion overlapping the semiconductor layer. |
| priorityDate |
2011-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |