| abstract |
[Problem] In a multilayer resist method, it is an object to provide a silicon-containing resist underlayer film having a high effect of inhibiting collapse of an ultrafine pattern and having an appropriate etching rate. [Solution means] A composition for forming a silicon-containing resist underlayer film comprising at least one or two or more quaternary ammonium salts represented by the following general formula (A-1) and a thermally crosslinkable polysiloxane (Sx). (In the formula, Ar 1 represents an aromatic group having 6 to 20 carbon atoms or a heteroaromatic group having 4 to 20 carbon atoms. R 11 is an alkyl group having 1 to 12 carbon atoms, an alkenyl group, an oxoalkyl group or an oxoalkenyl group, or a C 6 to 20 carbon atom. Represents an aryl group of, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms, and some or all of the hydrogen atoms of these groups may be substituted Z − is an organic or inorganic counter ion to the quaternary ammonium cation. It represents an anion.) |