| abstract |
An integrated circuit device according to the present invention includes a fin-type active region protruding from a substrate and extending in a first direction, a plurality of semiconductor patterns disposed spaced apart from each other from an upper surface of the fin-type active region and having a channel region, and a plurality of semiconductor patterns. And a main gate electrode extending in a second direction perpendicular to the first direction and disposed on an uppermost semiconductor pattern among a plurality of semiconductor patterns and extending in a second direction, and a sub-gate electrode disposed between the plurality of semiconductor patterns. A gate electrode, a spacer structure disposed on both sidewalls of the main gate electrode, and source/drain regions disposed on both sides of the gate electrode and connected to a plurality of semiconductor patterns and in contact with the bottom surface of the spacer structure, and the main gate The central portion of the electrode has a first width along the first direction, the bottom portion of the main gate electrode has a second width that is smaller than the first width along the first direction, It has a third width that is smaller than the second width along one direction. |