| abstract |
A semiconductor device includes a gate structure disposed over a channel region and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, a first work function control layer over the gate dielectric layer, a first shielding layer over the first work function control layer, a first barrier layer, and a metal gate electrode layer. The first work function control layer is made of an n-type work function control layer and includes aluminum. The first shielding layer includes a metal, a metal nitride, a metal carbide, a silicide, a layer containing at least one of F, Ga, In, Zr, Mn, and Sn, and an aluminum concentration lower than the first work function control layer It is made of at least one selected from the group consisting of an aluminum-containing layer having. |