| abstract |
The method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, and forming an opening. Etching the dielectric layer to form a second conductive feature by etching through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature. . |