| abstract |
An exemplary embodiment of the present disclosure includes a first substrate, a first insulating layer disposed on the first substrate and having a flat surface, and is buried in the first insulating layer to substantially match the surface of the first insulating layer. A first semiconductor chip having a first electrode having a flat surface, a first barrier disposed between the first insulating layer and the first electrode, a second substrate, and a flat surface disposed under the second substrate A second insulating layer having a second insulating layer, a second electrode buried in the second insulating layer and having a surface substantially flat with the surface of the second insulating layer, and a second electrode disposed between the second insulating layer and the second electrode A second semiconductor chip having a two barrier, and surfaces of the first insulating layer and the second insulating layer are bonded to each other to connect the first electrode and the second electrode, and the first insulating layer is the bonding interface A semiconductor device having a portion in contact with a side region of the first electrode adjacent to is provided. |