| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f548962093d468be111a5afcea9d1c3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2019-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccb064cfa0571c5dd1c51afbbb76457d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdc548ec9732ae5efe4fdb474029b6b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408c58919d5c89121152853b7463f67c |
| publicationDate |
2021-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210016656-A |
| titleOfInvention |
Etching solution for silicon nitride layer and method for preparing semiconductor device using the same |
| abstract |
The present invention relates to a silicon nitride film etching solution and a method of manufacturing a semiconductor device using the same, and more particularly, to improve the etch selectivity for the silicon nitride film compared to the silicon oxide film under the etching conditions and at the same time improve the storage stability under water or acid conditions. The present invention relates to a silicon nitride film etching solution capable of being prepared and a method of manufacturing a semiconductor device performed using the same. |
| priorityDate |
2019-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |