http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210013336-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13069 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2013-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2021-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20210013336-A |
| titleOfInvention | Semiconductor device |
| abstract | A transistor including an oxide semiconductor layer may have stable electrical properties. In addition, a highly reliable semiconductor device including such a transistor is provided. A semiconductor device includes a multilayer film including an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the multilayer film, and a gate electrode overlapping the multilayer film via the gate insulating film. In a semiconductor device, the oxide semiconductor layer contains indium, the oxide semiconductor layer contacts the oxide layer, the oxide layer contains indium, and has an energy gap that is larger than the energy gap of the oxide semiconductor layer. |
| priorityDate | 2012-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.