abstract |
The present invention provides a technique capable of forming a RuSi film having good step coverage. A method of forming a RuSi film according to an aspect of the present disclosure includes a step of supplying a silicon-containing gas to a substrate having a concave portion including an insulating film to adsorb silicon to the concave portion, and the concave portion to which the silicon is adsorbed. A precursor is supplied to form a Ru film in the concave portion, and a silicon-containing gas is supplied to the concave portion in which the Ru film is formed to form a RuSi film. |