| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f548962093d468be111a5afcea9d1c3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate |
2019-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccb064cfa0571c5dd1c51afbbb76457d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1ef3258c13d36baa9dfaa87e670b718
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdc548ec9732ae5efe4fdb474029b6b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408c58919d5c89121152853b7463f67c |
| publicationDate |
2021-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210007540-A |
| titleOfInvention |
Etching solution for silicon nitride layer and method for preparing the same |
| abstract |
The present invention relates to a silicon nitride film etching solution and a method for preparing the same, and more particularly, in the silicon nitride film etching solution, the trans structure compound represented by Chemical Formula 1 increases the bonding with the silicon oxide film under the etching conditions. It is to provide a silicon nitride film etching solution and a method of manufacturing the same that can lower the etching rate of the silicon nitride film compared to that of the silicon nitride film. |
| priorityDate |
2019-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |