| abstract |
Methods, apparatus, and systems for controlling processing of a substrate within a process chamber are described herein. In some embodiments, a method of controlling a substrate process within a process chamber includes: determining a position of a movable magnetron within the process chamber with respect to a reference position on a surface of the substrate; And adjusting, based on the determined position of the magnetron, a power parameter of the at least one power supply that affects the substrate processing, for example, to control at least one of a deposition rate or an etch rate of the substrate processing. In one embodiment, the power parameter to be adjusted is a power set point of at least one of direct current (DC) source power, radio frequency (RF) bias power, DC shield bias voltage, or electromagnetic coil current of the at least one power supply. |