| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2017-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_912c2e9db3eb6de90ccbe26f35e34fe9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85e817bdb7e7a5a6058f0ee1c1043c91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0d74e9d45d20e0b7bac7c1b110f4383
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da1f1d2a74f33228972a7fb6d948cc78 |
| publicationDate |
2021-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20210005317-A |
| titleOfInvention |
Substrate processing apparatus, method of manufacturing semiconductor device, computer program and process vessel |
| abstract |
The present invention provides a technique for improving the in-plane film thickness uniformity of a film formed on a wafer. According to one aspect of the present invention, there is provided a processing chamber for processing a substrate; a processing gas nozzle for supplying processing gas into the processing chamber; An inert gas nozzle for supplying an inert gas into the processing chamber; And an exhaust pipe for exhausting the atmosphere in the processing chamber, and an angle formed by a first straight line connecting the processing gas nozzle and a central portion of the substrate and a second straight line connecting the inert gas nozzle and the central portion of the substrate is θ. In this case, there is provided a substrate processing apparatus in which the processing gas nozzle and the inert gas nozzle are provided around the substrate so that the? Becomes a value determined according to the surface area of the substrate. |
| priorityDate |
2017-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |