| abstract |
Embodiments disclosed herein relate to forming MOSFET devices. In particular, to improve the density and performance of the metal-silicide layer in MOSFETs, one or more pre-silicide treatments are performed on the substrate prior to deposition of the metal-silicide layer. Metal-silicide formation, formed with pre-silicide treatment(s), may occur before or after formation of metal gates during MOSFET fabrication. |