http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200144652-A

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filingDate 2019-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ed3122a7931c9a485d902a66bb280a7
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publicationDate 2020-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200144652-A
titleOfInvention Manufacturing method of diamond electrode and diamond electrode using thereof
abstract The present invention comprises the steps of (A) preparing a substrate including a nanostructure on the surface; (B) disposing a diamond thin film on the surface of the nanostructure; And (C) plasma treating the diamond thin film. Including, In step (C), the plasma-treated diamond thin film is a method of manufacturing a diamond electrode having a signal sensitivity ratio (I D / I G intensity ratio) greater than 2 by Raman analysis The fabricated diamond electrode is disclosed.
priorityDate 2019-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.