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filingDate 2019-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_067eb406704be5c986846935c9b1bad2
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publicationDate 2020-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200136391-A
titleOfInvention Laser processing method for thin film structures
abstract A method of processing a thin film structure comprises: providing a thin film structure comprising a stack of two or more thin film layers supported on a surface of a substrate, the stack having a depth orthogonal to the substrate surface; And by using a direct write laser technique to scan the laser beam along the desired cutting line on the surface of the stack and along the scan path covering the area of the cutting line to ablate the material of the stack to at least the surface of the substrate through the depth of the stack. Forming a cut through the depth of the stack, wherein the direct write laser technique has a duration of less than 1000 femtoseconds at a wavelength in the range of 100 to 1500 nm and produces a fluence in the range of 50 to 100,000 mJ/cm 2 . Implemented using ultrashort pulsed laser output pulses to deliver.
priorityDate 2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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