| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2020-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a99461710665b8802ed02538fe8f0a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44b3dd9b1d61f4c34c4472de2539c274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6c40047b46afb11d5f61ad06c3924e3 |
| publicationDate |
2020-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200127949-A |
| titleOfInvention |
Si precursors for deposition of SiN at low temperatures |
| abstract |
Precursors and methods for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some implementations, the silicon precursors include an iodine ligand. Silicon nitride films are FinFETs or other types of multi-gate FETs. When deposited on a three-dimensional structure such as a flow, it may have a relatively uniform etch rate for both the horizontal and vertical portions In some embodiments, the various silicon nitride films of the present invention have half the thermal oxide removal rate. It has an etch rate of less than in dilute HF (0.5%). |
| priorityDate |
2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |