| abstract |
A high resistivity single crystal semiconductor handle structure is provided for use in manufacturing SOI structures. The handle structure includes an intermediate semiconductor layer between the handle substrate and the buried oxide layer. The intermediate semiconductor layer includes a polycrystalline, amorphous, nanocrystalline, or single crystal structure, and also Si 1-x Ge x , Si 1-x C x , Si 1-xy Ge x Sn y , Si 1-xyz Ge x Sn y C z , Ge 1-x Sn x , Group IIIA-nitrides, semiconductor oxides, and any combination thereof. |