| abstract |
Memory devices, systems and methods of operation thereof are provided. The memory device may include a nonvolatile memory array and control circuitry. The control circuit is configured to store a value corresponding to a plurality of activation commands received at the memory device, to update the value in response to receiving an activation command received from a host device, and the value to a predetermined threshold. In response to being exceeded, it may be configured to trigger a corrective action performed by the memory device. The control circuit is configured to store a second value corresponding to a plurality of refresh operations performed by the memory device, to update the second value in response to performing a refresh operation, and to have the value a second predetermined threshold. In response to exceeding, it may be further configured to trigger a second remedial action performed by the memory device. |