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filingDate 2019-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b500ed041e861dd510007ee60af305d
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publicationDate 2020-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200116705-A
titleOfInvention Apparatus for collecting by-product of semiconductor manufacturing process
abstract The present invention relates to an apparatus for collecting reaction by-products of a semiconductor process, the object of which is to provide uniformly high temperature in a collection space into which exhaust gas including WF 6 (tungsten hexafluoride) discharged after use in a semiconductor manufacturing process is introduced. A semiconductor equipped with a heating jacket that is installed in a detachable structure in the housing and controls the collection area, and an internal collection tower divided into upper and lower sections configured to generate high-efficiency collection reactions with sufficient travel path and time in a narrow collection space. It is to provide a device for collecting reaction by-products of the process. The configuration of the present invention is a reaction by-product collecting apparatus for a semiconductor process, comprising: a heating jacket configured to be detachably installed along an outer circumference of a housing to provide a heat source; An upper inner collecting tower configured to descend and collect the exhaust gas while being repeatedly changed in the outer radial direction or the center direction by alternately arranging a plurality of first and second collecting plates having different shapes up and down at regular intervals; A plurality of third collection plates of the same shape with different shapes on the plane are alternately arranged so as to cross each other at regular intervals up and down, and the exhaust gas descends and is collected while changing repeatedly according to the shape of each area of the third collection plate. An apparatus for collecting reaction by-products of a semiconductor process further comprising a lower internal collection tower configured to be a characteristic of the invention.
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