| abstract |
In a thin film transistor using an oxide semiconductor layer, it is an object to obtain a semiconductor device having a high signal detection sensitivity and a wide dynamic range. By configuring an analog circuit using a thin film transistor having an oxide semiconductor that functions as an insulator in a state where the hydrogen concentration is 5 × 10 19 (atoms/cm 3 ) or less and no electric field is generated, it functions as a channel forming layer. A semiconductor device with high signal detection sensitivity and a wide dynamic range can be obtained. |