Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3151 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
filingDate |
2020-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc46125514768887c118a4412b7baccb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebdfbf7429253fcf1ed46261652387c |
publicationDate |
2020-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20200105752-A |
titleOfInvention |
Substrate processing method and substrate processing apparatus |
abstract |
An object of the present invention is to improve necking based on the residue of a mask of a transition metal. A substrate processing method for treating a substrate having a mask formed of a transition metal and having an opening and an etched film formed under the mask and containing silicon, wherein a gas having a carbonyl bond is added to a gas containing a halogen. There is provided a substrate processing method having a step of etching the etched film through an opening of the mask by plasma generated from one mixed gas. |
priorityDate |
2019-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |