| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2019-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed15979f74b08173a7bf11a16b005cc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a028bd3a201f504f7744d73c3a369dae |
| publicationDate |
2020-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200100586-A |
| titleOfInvention |
Semiconductor manufacturing equipment |
| abstract |
A semiconductor manufacturing apparatus capable of etching a metal film containing a transition metal element at high speed and with high precision using an ignition gas is provided. The semiconductor manufacturing apparatus includes a processing chamber 1 provided with a vacuum container 60, a stage 4 provided in the vacuum container, and in which a sample 3 on which a metal film containing a transition metal element is formed is placed, It has a vaporization chamber 2 provided in a vacuum container and equipped with a vaporization nozzle unit 70 that vaporizes the ignition gas raw material liquid supplied from the outside, and introduces the ignition gas obtained by vaporizing the ignition gas raw material liquid into the processing chamber. The metal film is etched. |
| priorityDate |
2019-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |