| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2020-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_543d1538a8ce3bf1ed24b0d187bc27b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_442179bfd4101dabd31c032c668700ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddff1fea07a7cc9e801a687d914be4e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa35986b39a8f0aaa6ce5934ec68891d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b63f2c6bb1227bb685173bb699e76440
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6216fc29da445dbbaba292b371a97b7 |
| publicationDate |
2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200096137-A |
| titleOfInvention |
Gate spacer structures and methods for forming the same |
| abstract |
The present disclosure is directed to a semiconductor device comprising a substrate having a top surface and a gate stack. The gate stack includes a gate dielectric layer on a substrate and a gate electrode on the gate dielectric layer. The semiconductor device also includes a multi-spacer structure. The multi-spacer includes a first spacer, a second spacer, and a third spacer formed on the sidewalls of the gate stack. The second spacer includes a first portion formed on a sidewall of the first spacer and a second portion formed on an upper surface of the substrate. The second portion of the second spacer has a thickness in the first direction that gradually decreases. A third spacer is formed on the second portion of the second spacer and on the top surface of the substrate. The semiconductor device further includes a source/drain region formed in the substrate, and a portion of the third spacer is adjacent to the source/drain region and a second portion of the second spacer. |
| priorityDate |
2019-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |