| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2020-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_488e56ebb4caeeeeb198aa01eb9120ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb2a3367ff08371cff36f1d9607455c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29c9d092bce9944a72cdb9f313d37499
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acbbd31b245cf4155c7d66af328f3f7a |
| publicationDate |
2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200090108-A |
| titleOfInvention |
Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| abstract |
A method of forming a transition metal-containing film on a substrate by a periodic deposition process is disclosed. The method comprises contacting a substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen-containing adduct ligand; And contacting the substrate with a second gaseous reactant comprising a reducing agent precursor. The deposition method may also include forming a transition metal-containing film having an electrical resistivity of less than 50 μΩ-cm at a thickness of less than 50 nanometers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220073047-A |
| priorityDate |
2019-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |