http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200090048-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3018 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 |
| filingDate | 2019-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81c3f21b498471d6b676574be7577852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_054adfaf2510b6703d6310227d302e0c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bf0d5742754e02a226ae76319dc0050 |
| publicationDate | 2020-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20200090048-A |
| titleOfInvention | Semiconductor device |
| abstract | An embodiment includes a semiconductor structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and when primary ions are applied to the semiconductor structure, secondary ions are released, and the secondary ions are Aluminum, and magnesium, and the ionic strength of the aluminum secondary ion includes a plurality of aluminum intensity peaks, and a first aluminum intensity peak having the largest ionic strength among the plurality of aluminum intensity peaks; A second aluminum intensity peak having the largest ionic intensity in a region spaced apart in the first direction from the first aluminum intensity peak; A plurality of third aluminum intensity peaks including the largest ionic intensity in a region spaced apart from the first aluminum intensity peak in the second direction; And a first valley disposed in a region between the plurality of third aluminum intensity peaks, wherein the doping concentration of magnesium secondary ions includes: a first doping concentration having the largest doping concentration; A second doping concentration having the smallest doping concentration in a region spaced in the first direction from the first aluminum intensity peak; And a third doping concentration having the largest doping concentration in a region between the second doping concentration and the first aluminum intensity peak, wherein the second conductivity type semiconductor layer includes the first doping concentration and the first doping concentration. A first region disposed between regions between aluminum intensity peaks, and the active layer includes a second region disposed between the plurality of third aluminum intensity peaks and the first valley, and the first conductivity type semiconductor layer Includes a third region spaced apart in the second direction from the plurality of third aluminum intensity peaks, and the third doping concentration is disposed in a region between the first aluminum intensity peak and the second aluminum intensity peak and the The first direction is a direction toward the first doping concentration at the first aluminum intensity peak, and the second direction discloses a semiconductor device opposite to the first direction. |
| priorityDate | 2019-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.