http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200086631-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2020-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_084259bcac48307cf7a5808e49717143 |
| publicationDate | 2020-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20200086631-A |
| titleOfInvention | Method of forming nitride film and apparatus for forming nitride film |
| abstract | The present invention provides a technique capable of forming a nitride film at a low temperature, and further reducing damage to the underlying substrate on which the nitride film is to be formed. The step of forming a layer containing the element on the substrate by supplying a source gas containing an element to be nitrided to the substrate, and plasma-forming the reformed gas containing hydrogen gas. The process comprising the step of modifying the layer containing the element and the step of thermally activating the nitriding gas containing nitrogen with the heat-activated nitriding gas, and the step of thermally nitriding the layer containing the element is repeated a plurality of times. , Nitride film formation method. |
| priorityDate | 2019-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.