| abstract |
The semiconductor device includes a field effect transistor (FET). The FET includes a channel region and a source/drain region disposed adjacent to the channel region. The FET also includes a gate electrode disposed over the channel region. The FET is an n-type FET, and the channel region is made of Si. The source/drain region includes an epitaxial layer including Si 1-xy M1 x M2 y , where M1 is one or more of Ge and Sn, M2 is one or more of P and As, and 0.01 ≤ x ≤ 0.1. |