| abstract |
The semiconductor structure includes a substrate including a first region and a second region, a first channel layer disposed in the first region and a second channel layer disposed in the second region, a first dielectric layer and a first dielectric layer disposed on the first channel layer. And a second dielectric layer disposed on the second channel layer, and a first gate electrode disposed on the first dielectric layer and a second gate electrode disposed on the second dielectric layer. The first channel layer in the first region includes a Ge compound at a first Ge concentration, and the second channel layer in the second region includes a Ge compound at a second Ge concentration. The first Ge concentration in the first channel layer is greater than the second Ge concentration in the second channel layer. |