| abstract |
The method includes removing a dummy gate stack to form an opening between gate spacers to remove the dummy gate stack; Forming an inhibitor film selectively on sidewalls of the gate spacers, wherein the sidewalls of the gate spacers face the opening, forming an inhibitor film; And selectively forming a dielectric layer over the surface of the semiconductor region. The inhibitor film inhibits the growth of the dielectric layer on the inhibitor film. The method further includes removing the inhibitor film and forming an alternate gate electrode in the remaining portion of the opening. |