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publicationDate 2020-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200050358-A
titleOfInvention Pattern formation method and method for manufacturing a semiconductor device
abstract In the pattern forming method, a photoresist pattern is formed on a target layer to be patterned. An extension material layer is formed on the photoresist pattern. The target layer is patterned by using at least the layer of extension material as an etch mask.
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