http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200039619-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8e9e0b17a7397b2f1b810b713a0e7651 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2001-0155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-0155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2203-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B1-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-0155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-015 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0735 |
| filingDate | 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cac859f2812b31b5a96af67466a80ef4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66425afa69d364e25706f72b1ca2445e |
| publicationDate | 2020-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20200039619-A |
| titleOfInvention | Epsilon-near-zero absorber with adjustable field effect |
| abstract | The present disclosure provides systems and methods for adjustable ENZ materials that can change the absorbing power of radiant energy. The tunable ENZ material can act as a broadband absorber that advantageously uses a stack of ultra-thin conductive layers with a dielectric constant of the epsilon-near-zero (ENZ) system at different wavelengths. The conductive materials can include at least partially transparent conductive oxide or transition metal nitride layers with different electron concentrations, and therefore different ENZ frequencies for energy absorption in the broadband range. The layer (s) can be directly adjusted to various frequencies to achieve a high level of absorption at deep sub-wavelength ENZ thicknesses. The applied electrical bias can create an electron accumulation / depletion region in the ENZ semiconductor device, and can control the plasma frequency and thus the high level of absorption in the device. Also, for a stack of layers, the carrier concentration can vary from layer to layer. |
| priorityDate | 2017-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.