| abstract |
The present invention relates to a semiconductor device, and more particularly, a substrate including an active pattern; A gate electrode crossing the active pattern and extending in a first direction; A separation structure crossing the active pattern and extending in the first direction; A first gate dielectric pattern on the sidewall of the gate electrode; A second gate dielectric pattern on the sidewall of the isolation structure; And a gate capping pattern covering the top surface of the gate electrode. The level of the upper surface of the separation structure is higher than the level of the upper surface of the gate capping pattern. |