| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2019-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27dedd4ed60052ef639f31434b10c2e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dda8e672f6baa1a9e643f7ad12a1408
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6174edd6bd3d9573eef76d1991cba45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53eda6d3da78c38aa541fcf984877edd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2982129ce5a3ba94cc62f226a08d378a |
| publicationDate |
2020-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200035210-A |
| titleOfInvention |
Method of cleaning, method of manufacturing semiconductor device, substrate processing apparatus, and program |
| abstract |
After cleaning the inside of the processing container, the next substrate processing is performed without lowering productivity. (a) a step of supplying and exhausting a first gas containing a fluorine-based gas at a first flow rate into a processing vessel at a first temperature after the substrate is treated, and removing substances adhered to the processing vessel, (b ) A second gas that is not chemically reacted with fluorine at a second temperature in the processing vessel at a second temperature higher than the first temperature after (a) is performed at a second flow rate higher than each of the first flow rate and the third flow rate. Supply and exhaust to physically desorb and remove residual fluorine in the processing container, and (c) chemically react with fluorine under the third temperature in a processing container at a third temperature higher than the first temperature after (a). The inside of the processing container is cleaned by supplying and exhausting the reacting third gas at a third flow rate to perform a process of chemically desorbing and removing residual fluorine in the processing container. |
| priorityDate |
2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |