http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200031606-A

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filingDate 2018-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ac27a5f80ccb28d9206b87075da70ba
publicationDate 2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20200031606-A
titleOfInvention Polishing method
abstract The present invention is a polishing method for carrying out polishing by sliding a semiconductor silicon wafer held by a polishing head on a polishing cloth attached to a surface while supplying an abrasive, primary polishing, secondary polishing, and finishing polishing on a semiconductor silicon wafer. When sequentially performed, the secondary polishing consists of polishing with an alkali-based abrasive containing glass abrasives and not containing a water-soluble polymer, and rinsing with an abrasive containing water-soluble polymers thereafter. , After rinsing is performed in two stages of polishing, and after performing the first stage of rinsing while supplying an abrasive containing a water-soluble polymer, the average molecular weight of the water-soluble polymer is greater than that of the first-stage abrasive. Provided is a polishing method in which the second step of rinsing is performed while converting to and supplying. Accordingly, there is provided a method for polishing a semiconductor silicon wafer having a small surface defect, a small DIC defect, and a good surface roughness.
priorityDate 2017-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 40.